Nitride Semiconductor Light-emitting Diodes (leds)
Materials, Technologies, And Applications
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Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications, Second Edition reviews the fabrication, performance and applications of the technology, encompassing the state-of-the-art material and device development, along with considerations regarding nitride-based LED design. This updated edition is based on the latest research and advances, including two new chapters on LEDs for large displays and laser lighting. Chapters cover molecular beam epitaxy (MBE) growth of nitride semiconductors, modern metalorganic chemical vapor deposition (MOCVD) techniques, the growth of nitride-based materials, and gallium nitride (GaN)-on-sapphire and GaN-on-silicon technologies for LEDs. Nanostructured, non-polar and semi-polar nitride-based LEDs, as well as phosphor-coated nitride LEDs, are also discussed.
The book also addresses the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots. Further chapters discuss the development of LED encapsulation technology and fundamental efficiency droop issues in gallium indium nitride (GaInN) LEDs.
It is a technical resource for academics, physicists, materials scientists, electrical engineers, and those working in the lighting, consumer electronics, automotive, aviation, and communications sectors.
- Features new chapters on laser lighting, addressing the latest advances on this topic
- Reviews fabrication, performance, and applications of this technology that encompass the state-of-the-art material and device development
- Covers the performance of nitride LEDs, including photonic crystal LEDs, surface plasmon enhanced LEDs, color tuneable LEDs, and LEDs based on quantum wells and quantum dots
- Highlights applications of nitride LEDs, including liquid crystal display (LCD) backlighting, infra-red emitters, and automotive lighting
- Provides a comprehensive discussion of gallium nitride on both silicon and sapphire substrates
|Titel:||Nitride Semiconductor Light-emitting Diodes (leds)|
|auteur:||Shen, Shyh-chiang (associate Professor, Georgia Institute Of Technology, Usa); Kuo, Hao-chung (national Chiao-tung University, Taiwan); Huang, Jian-jang (professor, National Taiwan University)|
|Uitgever:||Elsevier Science & Technology|
|Afmetingen:||229 x 152|
Dr. Shen joined Xindium Technologies, Inc. as a senior processing engineer in June 2001. He developed a proprietary high-performance InP SHBT technology for 40Gb/s OEIC applications and InP-based power HBT technology for wireless communications. In August 2004, he joined the HSIC group at the University of Illinois as a postdoctoral research associate to work on exciting research projects. In January 2005, he joined the Georgia Institute of Technology as an Assistant Professor. Dr. Shen holds 7 awarded U.S. patents in the MEMS and microelectronics areas. His current research is focused on wide bandgap semiconductor microelectronics and optoelectronic devices for high-energy-efficiency applications.
Comprehensive reference on LEDs, including GaN, InN, AlGaN and InGaN, high brightness, energy efficiency and performance, reliability, packaging and applications