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Industry Standard Fdsoi Compact Model Bsim-img For Ic Design

Industry Standard Fdsoi Compact Model Bsim-img For Ic Design - Duarte, Juan Pablo; Mckay, Thomas; Chauhan - ISBN: 9780081024010
Prijs: € 183,95
Levertijd: 3 tot 4 werkdagen
Bindwijze: Boek
Genre: Techniek
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Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.

The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

  • Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model
  • Explains the complex operation of the FDSOI device and its use of two independent control inputs
  • Addresses the parameter extraction challenges for those using this model


Titel: Industry Standard Fdsoi Compact Model Bsim-img For Ic Design
auteur: Duarte, Juan Pablo; Mckay, Thomas; Chauhan
Mediatype: Boek
Taal: Engels
Aantal pagina's: 216
Uitgever: Elsevier Science & Technology
NUR: Techniek
Afmetingen: 153 x 228 x 23
Gewicht: 364 gr
ISBN/ISBN13: 9780081024010
Intern nummer: 41331213

Biografie (woord)

Harshit Agarwal received the PhD degree from Indian Institute of Technology Kanpur, India in 2017. He is currently working as center manager and post-doc fellow at Berkeley Device Modeling Centre, BSIM group, University of California Berkeley, Berkeley, USA. He has been involved in the development of multi-gate and bulk MOSFET models. He is also involved in the modeling and characterization of advanced steep sub-threshold slope devices like negative capacitance FETs, tunnel FET etc. He has authored several papers in the field of semiconductor device modeling, simulation and characterization.

Extra informatie

Provides the foundation for understanding the complexity of FDSOI device operation and its simulation model


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